Prognostic methodology for remaining useful life estimation of retention loss in nanoscale resistive switching memory》.pdf

Microelectronics Reliability 54 (2014) 1729–1734 Contents lists available at ScienceDirect Microelectronics Reliability journal homepage: www.elsevi /locate/microrel Prognostic methodology for remaining useful life estimation of retention loss in nanoscale resistive switching memory Nagarajan Raghavan a,⇑, Daniel D. Frey b, Kin Leong Pey a a Engineering Product Development Pillar, Singapore University of Technology and Design, Singapore 138 682, Singapore b Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA a r t i c l e i n f o a b s t r a c t Article history: Noise is a key indicator of the physical phenomenon underlying device operation, defect density and deg- Received 1 July 2014 radation trends. The analysis of noise in the frequency domain and the exponent (value of slope, a on log- Accepted 8 July 2014 arithmic scale) of the power spectral density (PSD) can provide useful insight on the operating and failure Available online 4 August 2014 mechanism of any device/system. We shall use this noise as a prognostic indicator to detect the instant at which the retention loss of a non-volatile memory device begins to occur. A qualitative perspective to Keywords: prognostic management of a resistive random access memory (RRAM) device is provided in this work. Diffusion Our method of detecting retention loss involves the unique ob