ZnO薄膜的制备及其性能.pdfVIP

维普资讯 学兔兔 化 工 进 展 2008年第27卷第8期 CHEMICAL INDUSTRY AND ENGINEERING PROGRESS ZnO薄膜的制备及其性能 赵跃智，周思凯，张 俊 (洛阳理工学院材料系，河南 洛阳 471023) 摘 要：用脉冲激光沉积(PLD)法在SiO2基片上制备了ZnO薄膜和Zn1一 M 0薄膜。x射线衍射、原子力显 微镜、紫外一可见分光光度计对ZnO薄膜的测试结果表明：薄膜具有 (103)面的择优取向，表面比较平坦；SiO2 基片上制备的薄膜在387 Bill附近存在明显的吸收边，且薄膜的吸收对基片温度变化不明显。通过对Zn卜xMnxO 薄膜的吸收光谱分析得出：Mn离子的掺杂改变了ZnO薄膜的禁带宽度，随Mn离子的掺杂量的增加，薄膜禁带 宽度增加；薄膜的光吸收也从直接跃迁过渡为间接跃迁过程。 关键词：PLD；ZnO薄膜；ZnhMnxO薄膜；光吸收谱 中图分类号：TN 304．2 1 文献标识码：A 文章编号：1000—6613(2008)一08—1277—03 Preparation and characteristic of ZnO thin films ZHAo Yuezhi，ZHoU Sikai，ZHANG Jun (Department ofMaterials Science，Luoyang Institute ofScience andTechnology，Luoyang 471023，Henan，China) Abstract．-Znl—xMnxO thin films of the different substrate temperatures and the defferent doping proportion were grown on Si02 substrates by pulsed laser deposition(PLD)．XRD，AFM，UV-Vis spectrophotometer were used to characterize ZnO films．The results indicated that the films had mainly (103)peaks and rather flat surface．Absorption spectra showed that ZnO thin films had obvious absorption sides at about 378nm and there was no evident change in absorption with substrate temperature Through analysis of Znl—xMnxO thin films absorption spectrum，it was found that Mn-doping changed the ZnO thin film energy gap．Along with increasing amount of Mn-doping，thin film energy gap increased．Thin films light absorption also transited from direct jump to indirect jump process． Key WOrds：PLD；ZnO thin films；Znl Mn