场效应管工作原理(外国英语资料).docVIP

场效应管工作原理 .txt32 works because of love, wandering people can return to their homes; because of love, tired soul, vitality. Hunger, love, like the stars, desire to shine, love, like the song of the century, to be sung for ever. Field Effect Transistor (FET), referred to as field effect transistors (FET). The transistor consists of two kinds of polar carrier, namely the majority carrier and reverse polarity of minority carriers in conducting, so called bipolar transistors, and the FET is by majority carrier in conducting, and bipolar instead, also known as the unipolar transistor. It belongs to the voltage control type semiconductor device with high input resistance (108 ~ 109), low noise, low power consumption, large dynamic range, easy integration, no two breakdown phenomenon, safe work area wide advantages, has become a bipolar transistor and a power transistor of the strong competitors. Field effect transistor classification, field effect transistor, junction type, insulated gate type two major categories. Junction field effect transistors (JFET) are named after two PN junctions, and insulated gate field effect transistors (JGFET) are named after their gate is completely insulated from other electrodes. At present in the insulated gate field effect transistor, is the most widely used MOS FET, MOS tube (metal oxide semiconductor field effect transistor MOSFET); in addition to PMOS, NMOS and VMOS power FET, and PI MOS recently published FET, VMOS power module etc.. According to the difference of channel semiconductor material, junction type and insulated gate type, each sub channel and P channel two kinds. The field effect transistor can be divided into depletion type and enhancement type according to the mode of conduction. The junction type field effect transistors are all depleted, and the insulated gate type FET has both depletion type and enhancement type. Field effect transistors can be divided into junction field effect transistors and MOS field effect transi