rf プラズマ cvd 法により作制した dlc 薄膜の热电性能评似.pdfVIP

Vol.61, №4,2010 325 研究論文 RF プラズマCVD 法により作製したDLC 薄膜の熱電性能評価 a,* a b 中村　雅史 ，原口　忠男 ，内山　　賢 a 茨城大学工学部（〒316︲8511　茨城県日立市中成沢町4︲12︲1） b 茨城大学大学院理工学研究科（〒316︲8511　茨城県日立市中成沢町4︲12︲1） Evaluation of Thermoelectric Performance of Diamond Like Carbon Thin Films Prepared by RF Plasma CVD Masashi NAKAMURA a,*, Tadao HARAGUCHI a and Satoshi UCHIYAMA b a Faculty of Engineering, Ibaraki University(4-12-1, Nakanarusawa-cho, Hitachi-shi, Ibaraki 316-8511) b Graduate School of Science and Engineering, Ibaraki University(4-12-1, Nakanarusawa-cho, Hitachi-shi, Ibaraki 316-8511) This paper presents an investigation of the thermoelectric performance of DLC films deposited on glass substrates using RF plasma CVD method. The respective thermoelectric performances of Si-doped DLC film and non-Si doped DLC film were evaluated and compared. The DLC films showed a Seebeck effect, and they had p-type semiconductor characteristics.The values of DLC films Seebeck coefficients were 1/5 - 1/100 compared to those of the conventional thermoelectric materials. At temperatures of 80-200 ℃, the Seebeck coefficients of Si-doped DLC and non-doped DLC were almost identical. The resistivity value of DLC films decreased exponentially with increasing temperature. Furthermore, the DLC film values were much larger than those of conventional thermoelectric materials: 105 to 1010 times larger. The thermal conductivity of DLC films was about one-half that of conventional thermoelectric materials at room temperature. The results presented above suggest that reducing DLC film resistivity through control of deposition conditions, doped element compositi