developments in gigascale silicon optical modulators using free carrier dispersion mechanisms发展gigascale硅光学调节器使用自由载流子色散机制.pdfVIP

Hindawi Publishing Corporation Advances in Optical Technologies Volume 2008, Article ID 678948, 10 pages doi:10.1155/2008/678948 Research Article Developments in Gigascale Silicon Optical Modulators Using Free Carrier Dispersion Mechanisms Juthika Basak,1 Ling Liao,1 Ansheng Liu,1 Doron Rubin,2 Yoel Chetrit,2 Hat Nguyen,1 Dean Samara-Rubio,1 Rami Cohen,2 Nahum Izhaky,2 and Mario Paniccia1 1 Intel Corporation, 2200 Mission College Blvd, SC12-326, Santa Clara, CA 95054, USA 2 Intel Corporation, S. B. I. Park Har Hotzvim, Jerusalem 91031, Israel Correspondence should be addressed to Juthika Basak, juthika.basak@ Received 6 December 2007; Accepted 15 April 2008 Recommended by Graham Reed This paper describes the recent advances made in silicon optical modulators employing the free carrier dispersion effect, specifically those governed by majority carrier dynamics. The design, fabrication, and measurements for two different devices are discussed in detail. We present an MOS capacitor-based modulator delivering 10 Gbps data with an extinction ratio of ∼4 dB and a pn-diode- based device with high-speed transmission of 40 Gbps and bandwidth greater than 30 GHz. Device improvements for achieving higher extinction ratios, as required for certain applications, are also discussed. These devices are key components of integrated silicon photonic chips which could enable optical interconnects in future terascale processors. Copyright © 2008 Juthika Basak et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. 1. INTRODUCTION communications. However, this approach has not gather