effect of the doping layer concentration on optical absorption in si δ-doped gaas layer影响掺杂层的浓度在siδ-doped光学吸收砷化镓层.pdfVIP

Optics and Photonics Journal, 2012, 2, 140-144 /10.4236/opj.2012.23020 Published Online September 2012 (http://www.SciRP.org/journal/opj) Effect of the Doping Layer Concentration on Optical Absorption in Si δ-Doped GaAs Layer Hassen Dakhlaoui Department of Physics, Faculty of Science Bizerte, Bizerte City, Tunsia Email: h_dakhlaoui@yahoo.fr Received June 15, 2012; revised July 19, 2012; accepted July 29, 2012 ABSTRACT We study in this paper the intersubband optical absorption of Si - doped GaAs layer for different applied electric fields and donors concentration. The electronic structure has been calculated by solving the Schrödinger and Poisson equations self-consistently. From our results, it is clear that the subband energies and intersubband optical absorption are quite sensitive to the applied electric field. Also our results indicate that the optical absorption depends not only on the electric field but also on the donor’s concentration. The results of this work should provide useful guidance for the design of optically pumped quantum well lasers and quantum well infrared photo detectors (QWIPs). Keywords: - Doped GaAs; Self-Consistently; The Intersubband Absorption 1. Introduction absorption in quantum wells have been proposed or de- monstrated experimentally to be very useful for far-infra- Si - doped semiconductor structures have been of great red detectors [9,10], electro-optical modulators [11,12], interest because of their technological ut