simulation at the start of the new millenium crossing the quantum-classical threshold模拟在新的千禧年的开始穿越quantum-classical阈值.pdfVIP

VLSI DESIGN (C) 2001 OPA (Overseas Publishers Association) N.V. 2001, Vol. 13, Nos. 1-4, pp. 155-161 Published by license under Reprints available directly from the publisher the Gordon and Breach Science Publishers imprint, Photocopying permitted by license only member of the Taylor Francis Group. Simulation at the Start of the New Millenium: Crossing the Quantum-Classical Threshold D. K. FERRY Department ofElectrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-5706, USA It is clear that continued scaling of semiconductor devices will bring us to a regime with gate lengths less than 50nm within another decade. The questions that must be addressed in simulation are difficult. Pushing to dimensional sizes such as this will probe the transition from classical to quantum transport, and there is no present approach to this regime that has proved effective. Contrary to the classical case in which electrons are negligibly small, the finite extent of the momentum space available to the electron set size limitations on the minimum wave packet- this is of the order of a few nano- meters- and leads to the effective potential. The latter is an approach to find the equivalent classical potential, by which the actual potential is modified by quantum effects. The use of the effective potential for analyzing the effect o