preparation and thermal characterization of annealed gold coated porous silicon准备和热退火黄金涂层多孔硅的特性.pdfVIP

Materials 2012, 5, 157-168; doi:10.3390/ma5010157 OPEN ACCESS materials ISSN 1996-1944 /journal/materials Article Preparation and Thermal Characterization of Annealed Gold Coated Porous Silicon Kasra Behzad, Wan Mahmood Mat Yunus *, Zainal Abidin Talib, Azmi Zakaria and Afarin Bahrami Department of Physics, Science Faculty, Universiti Putra Malaysia, Serdang, Selangor 43400 UPM, Malaysia; E-Mails: kasra.behzad@ (K.B.); zainalat@.my (Z.A.T.); azmizak@.my (A.Z.); afarin.bah@ (A.B.) * Author to whom correspondence should be addressed; E-Mail: mahmood@.my; Tel.: +603-89-466-684; Fax: +603-89454-454. Received: 9 November 2011; in revised form: 22 November 2011 / Accepted: 24 November 2011 / Published: 16 January 2012 Abstract: Porous silicon (PSi) layers were formed on a p-type Si wafer. Six samples were 2 anodised electrically with a 30 mA/cm fixed current density for different etching times. The samples were coated with a 50–60 nm gold layer and annealed at different temperatures under Ar flow. The morphology of the layers, before and after annealing, formed by this method was investigated by scanning electron microscopy (SEM). Photoacoustic spectroscopy (PAS) measurements were carried out to measure the thermal diffusivity (TD) of the PSi and Au/PSi samples. For the Au/PSi samples, the thermal diffusivity was measured before and after annealing to study the effect of annealing. Also