高级掩模版制作流程.pptVIP

Lithography Scanner Photomask Components General Photomask making Flow Address size Process bias: CD Terminology Mask CD The mask critical dimension is the desired CD plus any measurement correlation value. Data CD The data CD is the size of the CD in the MEBES format data file. Process bias: Positive Process We currently uses a “positive process” to manufacture the great majority of photomasks In a positive process, clear geometries shrink, and dark lines grow as the mask is developed and etched Data sizing for process bias We recommends “sizing” the pattern data in increments of the on grid output address to facilitate the prescribed process bias. Data CD - mask CD = 0.05 um to 0.25 um overprocess For a positive process, the sign of the process bias is shown in the table below Digitized Non Digitized Clear (-) bias (+) bias Dark (+) bias (-) bias Mask Back-end flow introduction Mask Defect Classify Traditional binary mask Advanced binary mask Embedded Attenuated PSM Bi-layer materials for EAPSM Bi-layer films using MoSi for phase shift MoSi on quartz Chrome on MoSi Chrome provides dark border around field Chrome acts as etch mask for MoSi to ‘clear’ MoSi provides partial transmission and shift MoSi material differ for I-line, 248 nm, or 193nm Other material can be CrO, ZrSiN, MoSiON, TiSiN EAPSM process flow Making Bi-Layer EAPSM 1st phase opens all “clear” structures. 2nd phase removes chrome from embedded phase shift areas Mask Process Marks Overlay/2nd write Multi-point Fit to 1st write Writer reads mask first Coarse/Fine align marks Phase process monitor RIE End Point Box Critical Parameters for EAPSM Wavelength I-line = 365nm KrF or DUV = 248nm ArF or 193DUV = 193nn % transmission Phase error spec Transmission error specification Target CD and minimum feature size for 1st 2nd litho steps correct flows / templates Phase/Align Template added. Lay 1 and 50 Etch box placed