一维位势中粒子居留时间的理论分析-theoretical analysis of particle residence time in one-dimensional potential.docxVIP
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一维位势中粒子居留时间的理论分析-theoretical analysis of particle residence time in one-dimensional potential
或左侧的概率,已经有成熟的计算方法,本文对居留时间的研究目的是,进 一步了解粒子在各位势区域内停留的平均时间,这对量子器件的设计具有重 要的理论指导意义。关键词 双势垒量子阱;亚稳态;居留时间;透射系数AbstractSince the early 1930s, there have been many attempts, especially in recent years, to answer the question “what is the average length of time spent in a classically inaccessible region by an incident tunneling particle?” The double- barrier heterostructure (DBH) research work was pioneered by Tsu, Esaki, and Chang, since then quantum transport of electrons in double barrier resonant- tunneling (DBRT) heterostructure has been extensively investigated and studied. The negative differential resistance (NDR) observed in these heterostructures has already been applied in the development of fast devices such as micro- millimeter-wave oscillators and ultra fast logic elements. These works motivate a detailed research of the dynamics of these tunneling events, especially estimation of the various time scales for tunneling events. However, electron transport process in these heterostructures system is far from being completely understood, there is still considerable controversy and confusion in the literature about the basic concept and definition of tunneling time.For the transport process of electron resonant tunneling through a double barrier heterostructure system there exist various dynamic characteristic such as the time to tunnel through a barrier (traversal time), the time required for the wave packet to travel through the entire structure (transit time), the build-up time or charging time, and the escape time of electrons from the quantum well, as well as the dwell time of electrons residing in the quantum well. More research work is needed to clarify these concepts. Although there are different notions of tunneling events in the DHB, it is generally accepted that calculation of quantum transport of electrons using dwell time will achieve a better result.The dwell time for an electron tunneling though a single rectangular barrier is calculated by the continuo
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