卟啉自组装膜电化学表征及其应用分析-electrochemical characterization and application analysis of porphyrin self-assembled films.docxVIP
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卟啉自组装膜电化学表征及其应用分析-electrochemical characterization and application analysis of porphyrin self-assembled films
be efficient and convenient techniques for detecting anions in aqueous solutions using the redox couple Fe(CN)63-/4- as “reporter ion”. SAMs of porphyrins were shown to bind dihydrogenphosphate selectively over various other anions, including Cl-, Br-, NO2- or NO3-. Gold electrodes modified with porphyrins can detect H2PO4- even in the presence of a 10-fold excess of other anions studied.We have studied the electrochemical response of the organic-inorganic multilayers film using CV, SECM, and EIS, and have determined the electrochemical parameters. Multilayers film of nanostructured gold particles (AuNPs) has been fabricated based on the layer-by-layer (LBL) technique using a self-assembled monolayer of5,15-di-[p-(6-mercaptohexyl)-phenyl] -10,20-diphenyl porphyrin (trans-PPS2).AuNPs act as physical cross-link points in the multilayers. Using the high sensitivity of the electron transfer of ferricyanide to the modification of the gold surface with multilayers film, we selected this reaction as a probe to study the different modification stages at this modified electrode. SECM images obtained from bare and the different modification stages showed very good resolution with different topographies. Based on a comparison with the results of the experiments, a reasonable agreement can be obtained, which means a conjunction of these techniques.Electrochemical impedance spectroscopy (EIS) was employed to explore the permeation of electrolyte ions in thioctic acid SAMs to structural change induced by interaction with copper ions. EIS of thioctic acid SAMs is simulated with the equivalent circuit and challenged by spectra with thioctic acid SAMs submersed in KNO3 solution and subjected to various potential differences. The ion permeation was estimated in the relatively low range of frequencies, 1000 Hz to 0.2 Hz, and quantified by a film resistance in the equivalent circuit (RSAM). We have investigated the effect of structural change of SAM on the extent of ion per
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