过渡金属掺杂te基半导体材料制备与性能-preparation and properties of transition metal doped te - based semiconductor materials.docxVIP

杭州杭州电子科技大学硕士学位论文IIIISb1.92Co0.08Te3 样品的剩磁为 0.8 memu/g，矫顽力为 94.4 Oe。关键词：稀磁半导体，掺杂，热电，Bi2Te3，Sb2Te3，磁性，磁电阻 PAGE PAGE IVABSTRACTDiluted magnetic semiconductor (DMS), a new class of semiconductor material, can be fabricated by replacing the cation of a semiconductor with a transition metal element. The combination of semiconductor and magnetic properties makes this novel material simutaneouly possess electron charge and spin characters. As consequently, DMS has been very attractive since it was proposed.As we all know, Sb2Te3 and Bi2Te3 are the best thermoelectric materials near room temperature.