SOI二极管型非制冷红外成像系统关键电路设计-微电子学与固体电子学专业论文.docxVIP

ABSTRACT As a main component of infrared imaging systems, Infrared Focal Plane Array (IRFPA) has been an international research hotspot. Traditional cooled infrared focal plane array (IRFPA) has complex structure and the cost is high. However, with the excellent characteristics of no need of coolness and low cost, uncooled infrared focal plane array (UIRFPA) has an extensive application prospect. The structure of Silicon-on-Insulator (SOI) diode uncooled infrared focal plane array is simple, and it has a good compatibility with CMOS process. The detector unit does not depend on material performance. Therefore it has a high value for application and research. In this paper, key circuits for 384×288 SOI diode uncooled infrared focal plane array imaging system have been designed. Work is mainly composed of two parts. One is the design of readout circuit (ROIC) module. The integrated amplifier unit, the charge amplifier circuit, the sample and hold circuit, and the output buffer have been completed. It provides detailed information about the working principle and designing process in this paper. The analog circuit layout has been completed under 0.35μm 5V CMOS process. Also, the post-layout simulation has been finished. Simulation results show that the readout circuit is able to read, amplify and export the weak voltage signal from detectors. The other part is the design of a Pipeline ADC in signal processing module. The design of sampling and holding circuit of a 12-bit 20MS/s Pipeline ADC has been completed in this paper. The S/H circuit has been implemented under 0.18 μm CMOS process. It has been tested to verify that the S/H circuit can achieve more than 12-bit ENOB, when the power supply is 3.3V, the input signal frequency is 5MHz, and the sampling frequency is 50MHz. The key circuits of uncooled infrared focal plane array imaging system using SOI diode have been designed in this paper, which lays the foundation of later construction of infrared detector array ima