不同切割方式对GaN基LED芯片外量子效率影响的研究-电子与通信工程专业论文.docxVIP

1 1 万方数据 万方数据 万方数据 万方数据 摘要 摘要 自从 1991 年 Nichia 公司成功研制出 GaN 基蓝光 LED 后，GaN 基蓝光 LED 得到了迅速发展。LED 以其低耗能、长寿命、绿色环保等优点，成为 2l 世纪的新 一代照明光源。随着 III-V 族半导体工艺的日趋成熟，LED 芯片研制不断向高效高 亮度方向发展。随着其应用越来越广泛，如何提高 GaN 基 LED 的发光效率越来越 成为关注的焦点，影响 LED 发光效率的因素主要有内量子效率与外量子效率，外 量子效率的提高成为半导体照明 LED 关键技术之一。传统的芯片切割方式因其效 率低，成品率不高已逐渐落伍，不能满足现代化生产的需要，目前激光切割方式 正逐渐取代传统切割，而激光切割对 GaN 基 LED 芯片外量子效率产生一定的影响， 如何降低激光对 LED 出光的影响，提升 GaN 基 LED 外量子效率成为目前研究的 热点课题之一。 本文主要通过实验和分析研究了紫外激光划片方式、SD 划片方式对 LED 芯 片外量子效率的影响，并对两种不同的切割方式对 LED 芯片外量子效率的影响作 了比较，发现激光划痕造成的发光损耗面积越大，对芯片外量子效率的影响也越 大，芯片亮度越低。 通过理论分析与实验研究发现，紫外激光划片对 LED 芯片亮度的影响可达 14.21%，SD 划片对 LED 芯片亮度的影响约为 4.63%，通过优化 SD 划片工艺，减 少了激光划痕造成的发光损耗，使芯片亮度比紫外划片工艺提升 10.84%，有效提 升了器件的发光效率。 关键词：激光划片 隐形切割 外量子效率 蓝宝石衬底 2 ABSTRACT ABSTRACT Since 1991, Nichia company has successfully developed the GaN-based LED(light Emitting Diode), GaN-based LED has been developing rapidly. LED has become the new lighting of 21 century, owing to its high efficiency in electricity-light transforming, long life, and less pollution. As the development of fabricating tech of III-V compound semiconductor devices. The research of LED tends to high effect and high luminance. With the increasingly wide range of applications, how to improve the luminous efficiency of GaN- based LED is become more and more popular. The main influence factors of the LED luminous efficiency is the internal quantum efficiency and external quantum efficiency, and the external quantum efficiency is one of the key technology of LED. Because of its low efficiency, low input-output ratio, Traditional chip cutting method can not meet the needs of modern production. It has been gradually falling behind. Laser scribing is a new cutting method. The laser scribing method is gradually replacing the traditional cutting method, but laser scribing has a certain influence on the external quantum efficiency of GaN-based LED. How to reduce the laser influence on LED light effect, and promote external quantum of GaN-based LED