集成电路三维结构元器件的电 热特性研究-电磁场与微波技术专业论文.docx

GaAs，高功率异质结场效应管，沟道最大温度，高功率电磁脉冲II GaAs，高功率异质结场效应管，沟道最大温度，高功率电磁脉冲 II AbstractThe Abstract The electro-thermal characteristics of the three dimensional devices of integrated circuits 0c) are studied in this dissertation．The contributions of this paper will be first stated and then given concise explanations in the next six paragraphs． (1)At first，a briefsurvey ofthe status and developing trends ofthe IC is introduced．We mainly concentrate on the developments and achievements ofthe studies on the parasitic effects ofthe three dimensional interconnects and the GaN heterojunction field effect transistors(HFETs)．We also summarize the methods to study the electro-thermal characteristics in these two fields． (2)For the problems of the consumptions the CPU memories and times in conventional finite element method applying for three dimensional fields，a solution is presented．Based on the basic FEM，the element-by-element method(EBE)is introduced and combined with preconditioned conjugated gradient(PeG)technique．In addition，the feature characteristic of the arrays of the FORTRAN 95 is adopted to partially implement parallel computation in personal computers．All these not only save the memory space but also increase the efficiency of solving large sparse equations which make FEM feasible to apply for the study on the electro-thermal characteristics of the three dimensional devices ofintegrated circuits(IC)． (3)The capacitance extraction of hi曲-density three dimensional interconnects are performed using the hybrid finite element method．By comparing the CG and PCG iterative methods，it is demonstrated that the hybrid EBE-FEM-PCG method is more accurate，faster and more versatile， and can be used to characterize capacitive couplings among three-dimensional interconnects．It is numerically demonstrated that with this hybrid method in the extraction ofcapacitances，an effective and accurate convergent solution to the Laplace equation Can be obtained，with less memory and CPU time required，a