环形栅器件建模分析-物理电子学专业论文.docxVIP

哈尔滨工业大学工学硕士学位论文 哈尔滨工业大学工学硕士学位论文 - - II - Abstract The TID enhancement capability of the ICs increased as advanced integrate circuit technologies developed. However, the varieties of processes, wafers and product lines make greate difference between the commercial CMOS devices in integrate circuit. It is need to take TID enhancement technologies to make sure that devices used in space radiation environment for long time. The mechanism of total ionizing dose and some consummate TID enhancement methods have been introduced. An 8kb static random access memory has been designed with annular gate device in this paper. Firstly, a universal method which can be used for most annular gate layouts to calculate effective widths and some corrections for relevant parameters in commercial SPICE models have been proposed in this paper to solve the proplem that commercial SPICE models can not be used in annular gate device simulations. Comparasions between the proposed model and the existing model and simulations between SPICE and TCAD show a good accuracy of our model. Secondly, a study of the SMIC 0.18μm stardand cell library has been done to make sure that the row and column decoders of the designed SRAM can be completed by Top-Down flow in digital IC design with annular gate devices. Three kinds of standard cell with annular gate structure have been designed in this paper and verifications show that the designed standard cells can be used by digital circuits design tools. Finally, the layout design and verification of 8kb SRAM have been completed with the annular gate standard cells and other cells in SMIC 0.18μm stardand cell library. The results show that the leaf cell of designed SRAM works correctly in 10ns clock period. Keywords: TID, SPICE model, annular gate, Standard cell, SRAM - - PAGE IV - 目 录 摘 要I HYPERLINK \l _bookmark0 Abstract II HYPERLINK \l _bookmark1 第 1 章 绪 论 1 HYPERLINK \l _bookmark2 1.1 课题背景及其研究意义 1 HYPERLINK \l _bookmark3 1.2 总剂量效应概述 1 HYPERLINK \l