光电子学第5章光电探测器5资料教程.pptVIP

Optoelectronics and PhotonicsPrinciples and Practices;专业词汇选编;专业词汇选编;光纤技术中几种典型的光电探测器; 光探测器之所以能探测光辐射就是因为光辐射（即光频电磁波）传输能量。入射到光探测器上的光辐射使之产生光生载流子（或发射光电子）或使其本身的特性（如电阻、温度等）发生变化。 根据上述光辐射响应方式或工作机理的不同，前者称之为光电效应，后者称之为光热效应，由此构成的光探测器分别称为光子探测器和热探测器。 而光子探测器又分为：光电子发射探测器、光电导探测器、光伏探测器、光子牵引探测器；热探测器又分为：热探测器：测辐射热电偶、测辐射热计、热释电探测器、气动探测器。;Photodetectors;5.1 Principle of the pn junction photodiode;Figure 5.1 A schematic diagram of a reverse biased pn junction photodiode. Net space charge across the diode in the depletion region. Nd and Na are the donor and acceptor concentrations in the p and n sides. The field in the depletion region.;The figure5.1 (a) shows the simplified structure of a typical pn junction photodiode that has a p+ n type of junction. The illuminated side has a window, defined by an annular electrode, to allow photons to enter the device. There is an antireflection coating, typically Si3N4, to reduce light reflections. The p side is generally very thin (less than a micron) and is usually formed by planar diffusion into an n-type epitaxial layer.;Figure5.2 (b) shows the net space charge distribution across the p+n junction. These charges are in the depletion region, or in the space charge layer, and represent the exposed negatively charged acceptors in the p+ side and exposed positively charged donors in the n-side. The depletion region extends almost entirely into the lightly doped n-side and, it is a few microns.;Principle of the pn junction photodiode;The photodiode is normally reverse biased, the applied reverse bias Vr drops across the highly resistive depletion layer width W and makes the voltage across W equal to Vo+Vr where Vo is the built-in voltage. The field is found by the integration of the net space charge density ρnet across W subject to a voltage difference of Vo+Vr . The field only exists in the depletion region and is not uniform. It varies across penetrates into the n-side. The regions outside the depletion layer are the neutral regi