集成电路制造技术第五章(刻蚀)-干法dry etching.pdfVIP

第五章：刻蚀 Chapter V: Etching 等离子体干法刻蚀技术 Plasma Dry Etching Comparison of Dry etching vs. Wet etching Dry Etching A solid surface is etched in the gas or vapor phase, physically by ion bombardment, chemically by a chemical reaction through a reactive species at the surface, or by combined physical and chemical mechanisms. Typical Plasma Etching Processes Chemical etch—isotropic, fast rate (RIE ~1mm/min), can be highly selective, but can be non-uniform. Etch products are highly volatile, leading to rapid etching (in all direction) without the need for ion bombardment. Ion induced etchanisotropic, medium rate (RIE ~0.1mm/min). Etch products are less volatile, reluctant to leave etch surface, forming a protective “sidewall passivation” layer, giving more vertical etch results. Ion bombardment is required to remove products from etch surface to allow etch to proceed. Typical Plasma Etching Processes Physical etch—anisotropic, slow rate (RIE ~0.01mm/min), lower selectivity, usually uniform. Etch products are non-volatile (or no etch products are formed). Etch occurs through physical bombardment of the surface with ions, which knock off (sputtering) surface atoms. This requires very high levels of ion bombardment energy to remove material from surface. Etch profiles tend to be more positively sloped due to faceting. High mask