烧结温度对PVT制备定向多孔碳化硅陶瓷组织和性能的影响.docVIP

  烧结温度对 PVT 制备定向多孔碳化硅陶瓷 组织和性能的影响# 刘波波，杨建锋** 5 10 15 20 25 30 （金属材料强度国家重点实验室，西安交通大学，西安，710049） 摘要：对于碳化硅高温再结晶工艺获得的定向多孔碳化硅陶瓷，研究了烧结温度对材料组织 结构和性能影响。结果表明在低于 2050的温度烧结时，获得的多孔陶瓷为近似各向同性 的均匀多孔结构。烧结温度超过 2150时，定向多孔碳化硅陶瓷开始形成，随着温度的增 加烧失率增加，轴向弯曲强度大于径向弯曲强度，径向强度值先稍微增加后下降。在 0.3-0.5×105Pa 的 Ar 气氛、烧结温度 2300和时间 2 小时的条件下，对自由堆积松散成型的 碳化硅样品进行烧结，可获得气孔形态和晶粒取向沿轴向定向排列的多孔碳化硅陶瓷，其气 孔率高达 63.2%，轴向与径向的强度比为 5.34-5.69。 关键词：碳化硅；多孔陶瓷；高温再结晶 中图分类号：V254.2 Effects of SinteringTemperature on Preparation of Directional Porous Silicon Carbide Ceramic Microstructures and Properties via PVT LIU Bobo, YANG Jianfeng (State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University,Xi’an, 710049) Abstract: For the directional SiC porous ceramics obtained by the high-temperature recrystallization process, effects of firing temperature on the microstructure and mechanical properties were investigated. The results showed that the porous SiC ceramics porous ceramics obtained was the approximate isotropic homogeneous porous structure when the firing temperature was below 2050 ℃,. When the temperature exceeded 2150 ℃, the formation of orientation of porous silicon carbide began, and as the temperature increased, the weight loss increased, and the axial bending strength became higher than the radial value, which was slightly increased followed by decrease. With condition of an Ar atmosphere of 0.3-0.5 × 105Pa, the sintering temperature of 2300 ℃ and soaking time of 2 hours, the loosely packed silicon carbide samples were sintered and oriented porous silicon carbide ceramics with axially aligned pore and grain were obtained. The porosity reached to 63.2%, and the ratio of axial and radial strength was 5.34-5.69. Key words: SiC; Porous ceramics; High temperature recrystallization 35 0 引言 定向多孔 SiC 陶瓷是气孔具有定向分布的一类多孔 SiC 陶瓷，特殊的组织结构决定了其 在高温和低温流体过滤、催化剂载体和复合材料等方面具有广阔的应用前景，得到了广泛的 关注[1-3]。传统的多孔 SiC 陶瓷制备方法，包括氧化粘结法、燃烧合成法、聚碳硅烷转化法、 40 碳热反应、化学气相浸渍与反应、溶胶凝胶/碳热还原和液 Si 渗入法等[4-6]都不足以制备出具 有气孔定向分布的结构，另一方面大量添加剂的使用也极大限制