Background semiconductor stuff_SEMSUMB_background reading.docVIP

Semiconductors - Summary 1. Energy Bands, electrons, holes, Eg, EF, Fermi-Dirac function bonds in semiconductor crystal band figure Energy to break bond and free electron = Band gap energy Eg. Free electron is in the ‘conduction band’ Note this also produces a +ve ‘hole’ in the valence band Fermi - Dirac occupation function f(E) f(E) = probability of a state at energy E being occupied. ( at Temperature T) ( if E-EF kT) EF - Fermi energy. Occupation = ? at EF. E vs f(E) plotted beside band figure shows - c-band has small electron population, and v- band has small + hole population Band schematic E vs f(E) 2. General semiconductor relations n, p, NC , NV , EF , np product density formulas electrons holes NC, NV, effective densities of states in the conduction and valence bands. Typical values ~ 1025 m-3 np product Comment: np product depends only on Eg, not on EF (or doping) NOTE - if the energies are given in electron - Volt units (eV), then the energies must be scaled by factor ‘e’ or ‘q’ (1.6x10-19 ) e.g. EC - EF in eV units 3. Semiconductor - types Intrinsic (pure) Bands, n, p, ni, EF position Intrinsic n = p =ni EF at mid - gap n-type Bands, donors, n, p, EF position Donors Impurity atoms - e.g. Phosphorus EF above mid - gap 5 outer shell electrons (1 more than Si) n ~ ND Concentration ND m-3 (typ 1020 - 1025 m-3) Ionised +ve P+ at normal temperatures p-type Bands, acceptors, n, p, EF position Acceptors Impurity atoms - e.g. Boron EF below mid - gap 3 outer shell electrons (1 less than Si) p ~ NA Concentration NA m-3 (typ 1020 - 1025 m-3) Ionised -ve B- at normal temperatures 4. Transport and conductivity Drift velocity, mobility Current density conductivity ( n- p- intrinsic) resistance, intrinsic, doped and T Applied field E Vm-1 Drift velocity