Bipolar Resistive Switching Characteristic of Epitaxial NiO Thin Film on Nb-Doped Substrate英文文献资料.docVIP

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Bipolar Resistive Switching Characteristic of Epitaxial NiO Thin Film on Nb-Doped Substrate英文文献资料.doc

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Bipolar Resistive Switching Characteristic of Epitaxial NiO Thin Film on Nb-Doped Substrate英文文献资料

HindawiPublishingCorporation AdvancesinCondensedMatterPhysics Volume2012,ArticleID364376,8pages doi:10.1155/2012/364376 ResearchArticle BipolarResistiveSwitchingCharacteristicofEpitaxial NiOThinFilmonNb-DopedSrTiO3Substrate YongdanZhu1,2andMeiyaLi1 1 SchoolofPhysicsandTechnologyandKeyLaboratoryofArti?cialMicro/NanoStructuresoftheMinistryofEducation, WuhanUniversity,Wuhan430072,China 2 SchoolofInformationEngineering,HubeiUniversityforNationalities,Enshi,Hubei445000,China CorrespondenceshouldbeaddressedtoMeiyaLi,myli@ Received22May2012;Accepted31July2012 AcademicEditor:A.Alexandrov Copyright?2012Y.ZhuandM.Li.ThisisanopenaccessarticledistributedundertheCreativeCommonsAttributionLicense, whichpermitsunrestricteduse,distribution,andreproductioninanymedium,providedtheoriginalworkisproperlycited. Epitaxial NiO ?lm was grown on 0.7% Nb-doped SrTiO3 substrates by pulsed laser deposition. The I-V characteristics of Ag/NiO/Nb-SrTiO3/Indeviceshowreproducibleandpronouncedbipolarresistiveswitchingwithoutformingprocesswhichwas 3 inducedbytheNiO/Nb-SrTiO3junctions,andtheresistiveswitchingratioRHRS/RLRScanreach10 atthereadvoltageof?0.5V. Furthermore,theresistancestatescanbecontrolledbychangingthemaxforwardvoltage,reversevoltage,orcompliancecurrent, indicatingmultilevelmemories.Theseresultswerediscussedbyconsideringtheroleofcarrierinjectiontrapped/detrappedatthe interfacialdepletionregionoftheheterojunction. 1.Introduction most basic mechanisms are electrochemical redox process and Schottky-like barrier by trapped/detrapped e?ects at interface.Moreover,recentmoleculardynamicsimulations of memristors were reported by Savel’ev et al. for under- standing the RS mechanism in depth [22–24]. However, despite its fundamental importance, our understanding of theunderlyingRSphysicsisstillanopenquestionbecause ofthedi?erentpreparingmethodandequipment[25]. Band insulating perovskite SrTiO3 is widely used sub- Recently,theresistanceswitching(RS)e?ecthasattracteda greatdealofscienti?candt