Capacitive Model and S-Parameters of Double-Pole Four-Throw Double-Gate RF CMOS Switch英文文献资料.docVIP

Wireless Engineering and Technology, 2011, 2, 15-22 15 doi:10.4236/wet.2011.21003 Published Online January 2011 (http://www.SciRP.org/journal/wet) Capacitive Model and S-Parameters of Double-Pole Four-Throw Double-Gate RF CMOS Switch Viranjay M. Srivastava , Kalyan S. Yadav , Ghanashyam Singh 1 2 1 1 Department of Electronics and Communication Engineering, Jaypee University of Information Technology, Solan, India; VLSI 2 Design Group, Central Electronics Engineering Research Institute, Pilani, India. Email: viranjay@ Received September 28 , 2010; revised November 9 , 2010; accepted November 11 , 2010. th th th ABSTRACT In this paper, we have analyzed the Double-Pole Four-Throw Double-Gate Radio-Frequency Complementary Metal-Oxide-Semiconductor (DP4T DG RF CMOS) switch using S-parameters for 1 GHz to 60 GHz of frequency range. DP4T DG RF CMOS switch for operation at high frequency is also analyzed with its capacitive model. The re- sults for the development of this proposed switch include the basics of the circuit elements in terms of capacitance, re- sistance, impedance, admittance, series equivalent and parallel equivalent of this network at different frequencies which are present in this switch whatever they are ON or OFF. Keywords: Capacitive Model, Double-Gate MOSFET, DP4T Switch, Isolation, Radio Frequency, RF Switch, S-Parameter and VLSI 1. Introduction design to create better front-end radio-frequency CMOS circuits and presented the network properties of CMOS devices, the frequency response, the microwave noise properties and scaling rule. Mekanand et al. [3] have proposed a transceiver CMOS switch for 2.4 GHz with low insertion loss and excellent control v