electrical properties of self-assembled nano-schottky diodes自组装nano-schottky二极管的电特性.pdfVIP

Hindawi Publishing Corporation Journal of Nanomaterials Volume 2008, Article ID 243792, 7 pages doi:10.1155/2008/243792 Research Article Electrical Properties of Self-Assembled Nano-Schottky Diodes F. Ruffino,1, 2 A. Canino,1, 2 M. G. Grimaldi,1, 2 F. Giannazzo,3 F. Roccaforte,3 and V. Raineri3 1 Dipartimento di Fisica ed Astronomia, Universita di Catania, via Santa Sofia 64, 95123 Catania, Italy ` 2 MATIS CNR-INFM, Department of Physics and Astronomy, University of Catania, via Santa Sofia 64, 95123 Catania, Italy 3 Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), Stradale Primosole 50, 95121 Catania, Italy Correspondence should be addressed to F. Ruffino, francesco.ruffino@ct.infn.it Received 23 May 2008; Accepted 9 September 2008 Recommended by Xuedong Bai A bottom-up methodology to fabricate a nanostructured material by Au nanoclusters on 6H-SiC surface is illustrated. Furthermore, a methodology to control its structural properties by thermal-induced self-organization of the Au nanoclusters is demonstrated. To this aim, the self-organization kinetic mechanisms of Au nanoclusters on SiC surface were experimentally studied by scanning electron microscopy, atomic force microscopy, Rutherford backscattering spectrometry and theoretically modelled by a ripening process. The fabricated nanostructured materials were used to probe, by local conductive atomic force microscopy analyses, the electrical properties of nano-Schottky contact Au nanocluster/SiC. Strong efforts were dedicated to correlate the structural and electrical characteristics: the main observation was the Schottky barrier height dependence of the