铜互连线电迁移和锡须生长分析-electromigration and tin whisker growth analysis of copper interconnects.docxVIP

华中科技 大学硕士 学 华 中 科 技 大 学 硕 士 学 位 论 文 II万方数据 II 万方数据 Abstract Along with the development of microelectronics technology, the characteristic scale of the integrated circuit decreases constantly, and the cross-sectional area of VLSI interconnect metal film of is becoming more and more small, and the under current density has increased dramatically. At present, the metal interconnect electromigration has become one of the main failure mechanism of very large scale integrated circuit. In the development of the device to sub-micron size and nanometer, the width of the metal interconnect has been reduced, current density increased, more prone to electromigration failure. Tin whisker growth, as one of electromigration failure, is the most serious damage to device, and more and more get the attention of people. This paper analyzed the electromigration failure form of copper interconnection line, and designed and fabricated experiment platform for electromigration test by means of measuring resistance through fourprobemethod which vacuum、temperature and current controlled. Surface interconnection line structure was proposed which can be used in electromigration test continuously——structure for test with fine interconnect and Diamond pattern connected in turn. Then the structure was tested for electromigration, and after 100 hours, elcctromigration of cooper interconnection line with 2um depth、20um width and 1000 length was obtained. Structure for electromigration of TSV was put forward which was available direct measurement on one surface——Daisy chain structure which can be used to test continuously and current entrance, current export, positive voltage contact point and negative voltage contact point was separated. Then the structure was tested for electromigration. General electromigration improve measures are put forward as well as improvement measures against TSV electromigration. This paper also studied the tin whisker growth. Firstly, 8 dif