掺杂ZnO薄膜的制备及其异质结紫外光特性研究-光学工程专业论文.docxVIP

万方数据 万方数据 摘要 摘要 目前，ZnO 基光电器件中一个难题是优质稳定的 p 型 ZnO 材料制备。由于锌 填隙与氧空位，未掺杂的 ZnO 为 n 型半导体，自补偿效应对 p 型 ZnO 制备有负面 作用。因此，ZnO 基光电器件的结构一般是以 n 型 ZnO 与其他 p 型材料形成的异 质结。本文以 ITO（透明导电薄膜）为衬底制备良好的 p 型 ZnO 薄膜，形成异质 结，表征制备薄膜，研究异质结紫外光探测特性。 本文研究内容： （1）在查阅国内外相关文献后，对 ZnO 相关的知识进行了总结归纳，介绍 ZnO 结构及基本性质，阐述了异质结相关内容，另外，对目前 ZnO 基紫外光探测 器进行了分类。 （2）着重介绍磁控溅射相关理论，另外，对其他常见的薄膜制备方法进行简 要概括，总结薄膜表征方法，对不同表征方法的原理进行概括。 （3）在 ITO 衬底上制备不同 Ag 含量的 ZnO 薄膜，对薄膜进行表征，霍尔效 应测试结果表明 Ag 掺杂 ZnO 薄膜为 p 型，Ag 掺杂 ZnO 薄膜与 ITO 形成异质结， 对异质结紫外光响应特性进行了研究。 （4）对 Mg 掺杂 ZnO 靶材进行分析，指出复合型靶材的优势。制备 Mg 掺杂 ZnO 薄膜，对表征结果进行简要分析。透射光谱表明 Mg 掺杂可使 ZnO 薄膜吸收 波长限改变，Ag 掺杂可实现 ZnO 薄膜的 p 型转变，综合两种掺杂源所起作用，在 ITO 衬底上制备 Mg、Ag 共掺杂 ZnO 薄膜，形成异质结，表征制备样品，对紫外 光探测特性进行研究。 关键字：掺杂 ZnO 薄膜，ｐ型，异质结，紫外光探测 I ABSTRACT ABSTRACT One of the big challenges toward good ZnO-based optoelectronic devices is the dif?culty of reliably making p-type ZnO. Undoped ZnO usually shows n-type conduction due to presence of zinc interstitials and oxygen vacancies.Therefore, the acceptor carriers get compensated for easily. For this reason, considerable studies on ZnO-based optoelectronic devices were carried out by fabricating heterojunctions employing n-type ZnO with other p-type materials. This paper prepares good p-type ZnO films on ITO (transparent conductive film) substrate. The p-type ZnO and ITO form heterojunction. The prepared films are tested. The property of heterojunction UV detection is investigated. The main research contents are given as follows: After the access to relevant literature, relevant knowledge of ZnO was summarized to introduce the structure and basic properties of ZnO. The related content of heterojunction is described. In addition, the present ZnO-based ultraviolet detectors are classified. The theory of magnetron sputtering is focused on introducing. Other common method of preparation of films is summared briefly. The theory of test is expatiated. ZnO films with different Ag content are prepared on ITO. the films were characterized by Hall effect measurement. Results showed tha