sr掺杂对bifeo3基薄膜电性能的影响研究材料学专业论文.docxVIP

山东建筑大学硕士学位论文移动的氧空位(Zo：一)”或取代铋离子的锶离子(略)。而不是缺陷电子对 山东建筑大学硕士学位论文 移动的氧空位(Zo：一)”或取代铋离子的锶离子(略)。而不是缺陷电子对 (站)’-(Vo。)”，这为进一步降低薄膜材料的漏电流提供了参考，通过双层结构的探 讨，提高了薄膜的抗击穿性能，降低了薄膜的漏电流密度，开阔了制备更薄薄膜的新 思路，为BFO基薄膜在未来的电子元器件中的应用提供了实验基础。 关键词：BiFe03基薄膜，溶胶．凝胶法，Sr元素掺杂，铁电材料，制备工艺参数 Ⅱ 万方数据 山东建筑大学硕士学位论文Investigation 山东建筑大学硕士学位论文 Investigation on Electrical Properties of Sr Doped BiFe03一based Films Xie Xiaobin(Material Science) Directed by Fan Suhua ABSTRACT With the increase of sensors，resonators，drive，non—volatile memory,the ultrasonic transducers and other ferroelectric thin film electronic component demand，the preparation of low-cost，high—life，multi—functional integrated ferroelectric thin film materials is highly attention by researchers．In recent years，BiFe03(BFO)，as an ideal environment-friendly lead-flee multiferro-materials，because of its excellent ferroelectric，piezoelectric and ferromagnetic properties，is expected to replace Pb(Zr,Ti)03(PZT)in the future in micro—electromechanical systems，which will be widely used Currently，many factors still restrict the application of BFO thin film．On the one hand， the preparation process of BFO film is still not mature enough,BFO thin film prepared a performance of instability and the performance is not good；on the other hand，during the preparation of BFO thin film，since the atmosphere and other reasons，easy fluctuations in Fe valence(mainly trivalent iron is reduced to ferrous iron，valence decrease)occurs，in order to achieve price equilibrium would aerobic vacancy generation，which will allow leakage problem film samples prepared intensifies，thereby affecting the film other aspects of performance prepared，such as ferroelectric properties．Therefore，researchers become research focus on further optimization of the preparation process，doping，and build a multi—layer structure by means of improved performance BFO film In this paper,using the sol-gel method，layers by layer of the annealing process，a series BFO—based film with different parameters have been prepa