MOSFET封装不良与最终测试的技术分析.pdfVIP

2.7 对 Trim and Form 主要不良类型的研究 ···················································· - 34 - 2.8 封装不良的测试特点·················································································· - 34 - 2.9 本章小结 ····································································································· - 35 - 第三章 对MOSFET最终测试流程改进的研究 ····················································· - 36 - 3.1 综合改进的三个方面·················································································· - 36 - 3.2 计算测试项目上下限――静态方法和动态方法的比较··························· - 36 - 3.3 用测试结果反映封装不良的分 Bin 方案··················································· - 39 - 3.3.1 优化 MOSFET 的测试项目和测试顺序·············································· - 39 - 3.3.2 针对封装不良的分 Bin 方案 ······························································· - 42 - 3.4 面向良品率和不良品率的收率管理方案 ·················································· - 43 - 3.5 最终测试综合改进对产品质量提升的作用··············································· - 44 - 3.6 本章小结 ····································································································· - 46 - 第四章 结束语 ······································································································ - 47 - 4.1 对 MOSFET 封装不良与最终测试技术研究的总结 ································· - 47 - 4.2 后续工作的展望·························································································· - 48 - 参 考 文 献 ·········································································································· - 49 - 致 谢 ···················································································································· - 52 - 攻读硕士学位期间已发表或录用的论文 ····························································· - 53 - V 图 录 图 1-1 封装测试生产流程····················································