硅化钛薄膜的APCVD工艺研究-化学工程专业论文.docxVIP

AB ABSTRACT 万方数据 万方数据 ABSTRACT Due to low resistivity, high temperature resistant and good thermal stability, titanium silicide has been widely used in the field of integrated circuits and high-temperature materials. In this paper, titanium silicide thin films were prepared on glass substrates by atmospheric pressure chemical vapor deposition (APCVD) using TiCl4-SiH4-N2 reaction system. The experiment through study the mole ratio of Si/Ti, deposition temperature and deposition time, than discuss crystal phase formation process and the growth mechanism of titanium silicide thin film, thus summed change rule with deposition conditions of the titanium silicide thin film. The results showed that: Ti5Si3 films and TiSi2 films were prepared successfully on glass substrates by APCVD using TiCl4-SiH4-N2 reaction system. Ti5Si3 phase was the hexagonal structure while the TiSi2 film was C54 TiSi2 phase with orthogonal face centered structure. The crystal phase composition of titanium silicide changed with Si/Ti molar ratio. When the mole ratio of Si/Ti changed from 1 to 3, the films presented mainly the crystalline phase of Ti5Si3 and the content firstly increased and then decreased with the increased mole ratio of Si/Ti. As the mole ratio of Si/Ti was 2, the content of the Ti5Si3 crystalline phase was the highest and the crystalline grain was full growth and nearly spherical shape. Ti5Si3 films were optimally deposited in this mole ratio of Si/Ti. The main reaction equation is: 10SiH4(g)+5TiCl4(g)=Ti5Si3(s)+4SiCl4(g)+ 3SiH3Cl(g)+HCl(g)+15H2(g); When the mole ratio of Si/Ti changed from 3 to 5, the films presented mainly the crystalline phase of TiSi2 and the content firstly increased and then decreased with the increased mole ratio of Si/Ti. As the mole ratio of Si/Ti was 4, the content of the TiSi2 crystalline phase was the highest, the surface morphology was evenly distributed, orderly, and higher bulk density sheet structure. TiSi2 films were optimally deposited in this m