脉冲激光沉积制备氧化锌纳米棒及其性质的研究-微电子学与固体电子学专业毕业论文.docxVIP

Preparation Preparation and properties of ZnO nanorods grown by pulsed laser deposition Abstract Zinc Oxide(ZnO)iS a[1ew generation of II·VI compound semiconductor with a wide and direct band gap(3．37eV at room temperature)and the high exciton binding energy of 60 MeV．ZnO has a wurtzite crystal structure，low dielectric constant and high chemical stability，optoelectronic and piezoelectric properties． ZnO nanostructures show great promising applications in optoelectronic devices， surface acoustic wave devices，piezoelectricity materials，field emitters，sensors， ultraviolet lasers，solar cells and SO on． In this thesis，a PLD system was used for preparation of high-quality ZnO thin films and nanorods on Si(10∞substrates．The thesis engaged in the research work of the influences ofdifferent growth conditions(the substratc temperature，the sinsl_e pulse energy, the repeat frequency,the growth time)on feature of ZnO films in four aspects．Structural characteristics grown on Si Was studied by measurements of X-ray diffraction(XRD)．11le microstmctures of ZnO films have been investigated by atomic force microscope(AFM) and scan electron miroscope(SEM)．The optical properities of ZnO nanorods have been investigated by photoluminescence(PL)speetra“ The results showed that the crystal structure and the orientation and the s妇e morphology and the optical properity of zno thin films and Zn0 nanorods were affected significantly by growth conditions．During the changing ofsubstrate temperature，at 500C， ZnO film grown on Si(100)substrates is double deck s仃ucture；At 600℃，ZnO film grown onsi(100)substratesisnanorod structure；At700℃，ZnOfilmgrownonSi(100)substrates is columnar structure．The sizes of grains are influenced by the pulse energy,the repetition rate and the growth time．Room-temperature photoluminescence spectra of the ZnO samples show a strong V-UV emission as well as a blue—green emission． All in all，the researches on ZnO nanorods in the thesis make effoxt in the optoeleetronic field