AKZP20N65S广东奥科半导体.pdf免费

AKZP20N65S N-Channel 650 V (D-S) Super Junction MOSFET FEATURES PRODUCT SUMMARY • Reduced t , Q , and I rr rr RRM VDS (V) at TJ max. 650 • Low figure-of-merit (FOM) Ron x Qg RDS(on) max. () at 25 °C VGS = 10 V 0.19 • Low input capacitance (Ciss) Qg max. (nC) 106 • Low switching losses due to reduced Qrr Qgs (nC) 14 • Ultra low gate charge (Qg) Qgd (nC) 33 • Avalanche energy rated (UIS) Configuration Single APPLICATIONS • Telecommunications - Server and telecom power supplies • Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting • Consumer and computing