半导体制造技术导论（第二版）萧宏 第6章 光刻工艺.pptx

2023/4/211第6章 光刻工艺 本章主要内容 6.3 光刻技术的发展趋势 6.2 光刻工艺 6.4 本章小结 6.1 光刻胶 2集成电路工艺流程材料设计光刻板IC 工厂测试封装终测热处理光刻刻蚀去光刻胶离子注入 去光刻胶金属化化学机械研磨介质沉积晶圆 36.1 光刻胶 化学增强式光刻胶 正胶和负胶 本节主要内容 光刻胶及其成份 4光刻胶及其成份—光刻胶Photoresist (光刻胶)Photo sensitive material(感光材料)Temporarily coated(临时覆盖) on wafer surfaceTransfer design image(转移设计图形) on it through exposure(曝光)sensitive to UV(Ultraviolet, 紫外) light , insensitive to yellow light. 5光刻胶及其成份—光谱(可见光谱)Visible spectrum一般，人眼可以感知波长在400～760 nm之间的电磁波 6光刻胶及其成份—光刻胶的要求Requirement of Photoresist (光刻胶的要求) High resolution(分辨率) — Thinner PR film has higher resolution — Thinner PR film, the lower the etching and ion implantation resistance(抗蚀和离子注入性) High etch resistance(抗蚀性) Good adhesion(黏附性) Wider process latitude(工艺宽容度) — Higher tolerance(容许) to process condition change 7光刻胶及其成份—光刻胶参数Photoresist Performance Factor(性能参数) Resolution(分辨率) Adhesion(黏附性) Expose rate(曝光率), Sensitivity(灵敏度) and Exposure Source(曝光光源) Process latitude(工艺宽容度) Pinholes(气孔) Particle and Contamination Levels(粒子和污染物等级) Step Coverage(覆盖性) Thermal Flow(热流动性) 8光刻胶及其成份—成份Photoresist Composition(光刻胶的成份)Polymer (聚合物)Sensitizers (感光剂)Solvents (溶剂)Additives (添加剂) 9Polymer (聚合物)Solid organic(有机) materialTransfers designed pattern(图案) to wafer surfaceChanges solubility(溶解度) due to photochemical reaction(光化学反应) when exposed to UV light.Positive polymer(正胶聚合物): 酚甲醛或酚醛树脂Negative polymer(负胶聚合物): 聚异戊二烯橡胶光刻胶及其成份—聚合物 10Sensitizers (感光剂)Controls and/or modifies(调整) photochemical reaction(光化学反应) of PR during exposure.Positive sensitizer (正胶感光剂) — damage cross linked(交联) structure during exposure — from insoluble to soluble Negative sensitizer (负胶感光剂) — form cross linked(交联) structure during exposure — from soluble to insoluble光刻胶及其成份—感光剂 11Solvent (溶剂)Dissolves(溶解) polymers and sensitizers into liquid(溶液)Allow application(应用) of thin PR layers by spinning(旋涂), 0.5 ~ 3 mm. Positive PR (正胶): 醋酸盐Negative PR (负胶): 二甲苯光刻胶及其成份—溶剂 12Additives (添加剂)Various added chemical(