半导体制造技术导论（第二版）萧宏 第10章 化学气相沉积与电介质薄膜.pptx

第10章 化学气相沉积与介质薄膜 本章主要内容 10.1 化学气相沉积 10.2 介质薄膜的应用与特性 10.3 电介质CVD工艺 10.4 电介质CVD反应室清洗 10.5 CVD的发展趋势 10.6 本章小结材料刻蚀去光刻胶测试晶圆介质沉积光刻热处理封装光刻板离子注入 去光刻胶化学机械研磨终测设计集成电路工艺流程IC 工厂金属化10.1 化学气相沉积 本节主要内容 CVD简介 CVD反应过程和种类 CVD基本原理 CVD简介CVD Oxide vs. Grown Oxide CVD简介—介质薄膜的应用Please find out all kinds of dielectric films CVD简介—介质薄膜的应用Dielectric(介质) Thin Film Applications Shallow Trench Isolation (STI, 浅槽隔离) Sidewall spacer for salicide (自对准多晶硅化物), LDD (Lightly Doped Drain) Passivation Dielectric (PD) Dielectric ARC for feature size 0.25 mm CVD简介—介质薄膜的应用Dielectric(介质) Thin Film Applications Inter Layer Dielectric (ILD): PMD and IMD Pre-Metal Dielectric: PMD — normally PSG or BPSG —Temperature limited by thermal budget(热预算) Inter-metal dielectric: IMD — USG or FSG — Normally deposited(沉积) around 400 ℃ CVD简介—介质层数量 Minimum Number of Dielectric Process N: Number of metal layers CVD简介—薄膜与反应物 CVD反应过程和种类—反应过程(副产物移除)(副产物解吸)(副产物)(先驱物反应)(连续成膜)(先驱物吸附)(表面反应) CVD反应过程和种类—反应过程(气体分子)(成核)(联合)(连续成膜) CVD反应过程和种类—种类CVD Processes APCVD LPCVD PECVD CVD反应过程和种类—APCVDAtmospheric Pressure CVD APCVD: deposit SiO2 and Si3N4 APCVD O3-TEOS(四乙氧基烷) oxide process — widely used in STI and PMD CVD反应过程和种类—APCVDAPCVD Reactor (反应室) CVD反应过程和种类—LPCVDLow Pressure CVD Low pressure (低压): from 0.1 to 1 Torr — Longer MFP (平均自由程) — Good step coverage (阶梯覆盖) — Good uniformity (均匀性) Mainly used for polysilicon, SiO2 and Si3N4 CVD反应过程和种类—LPCVDLPCVD System CVD反应过程和种类—PECVDPlasma Enhanced CVD Plasma Reaction — High deposition rate (沉积速率) at relatively low temperature (低温) Stress control (应力控制) by RF widely used for SiO2, Si3N4, low-k, ESL CVD反应过程和种类—PECVDPlasma Enhanced CVD System CVD基本原理 Step Coverage (阶梯覆盖) — Gap fill (间隙填充) Surface Adsorption (表面吸附) — Sticking Coefficient (黏附系数) Chemical Reaction Rate (化学反应速率) CVD基本原理—阶梯覆盖Step Coverage and Conformity CVD基本原理—阶梯覆盖Step Coverage One of the most important specifications(标准) — Sidewall step coverage (侧墙阶梯覆盖) — Bottom step coverage (底部阶梯覆盖) — Conformity (一致性，型似性) — Overhang (悬突) CV