原创力文档characteristics of ingan-based light-emitting diodes on patterned sapphire substrates with various pattern heightsingan-based发光二极管的特性上的蓝宝石基板与各种模式的高度.pdfVIP
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characteristics of ingan-based light-emitting diodes on patterned sapphire substrates with various pattern heightsingan-based发光二极管的特性上的蓝宝石基板与各种模式的高度
Hindawi Publishing Corporation
Journal of Nanomaterials
Volume 2012, Article ID 346915, 6 pages
doi:10.1155/2012/346915
Research Article
Characteristics of InGaN-Based Light-Emitting Diodes on
Patterned Sapphire Substrates with Various Pattern Heights
Sheng-Fu Yu,1 Sheng-Po Chang,1 Shoou-Jinn Chang,1 Ray-Ming Lin,2
Hsin-Hung Wu,2 and Wen-Ching Hsu3
1 Department of Electrical Engineering, Institute of Microelectronics, Advanced Optoelectronic Technology Center,
Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan
2 Department of Electronic Engineering, Green Technology Research Center, Chang-Gung University, Taoyuan 333, Taiwan
3 Sino-American Silicon Products Incorporated, Hsinchu 300, Taiwan
Correspondence should be addressed to Sheng-Po Chang, changsp@.tw
Received 5 March 2012; Revised 26 May 2012; Accepted 8 June 2012
Academic Editor: Sheng-Rui Jian
Copyright © 2012 Sheng-Fu Yu et al. This is an open access article distributed under the Creative Commons Attribution License,
which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
The optical and electrical characteristics of InGaN-based blue light-emitting diodes (LEDs) grown on patterned sapphire substrates
(PSSs) with different pattern heights and on planar sapphire by atmospheric-pressure metal-organic chemical vapor deposition
were investigated. Compared with planar sapphire, it was found that the LED electroluminescence intensity is significantly
enhanced on PSSs with pattern heights of 0.5 (21%), 1.1 (57%), 1.5 (81%), and 1.9 (91%) µm at an injected current of 20 mA. The
increased light intensity exhibits the same trend in a TracePro simulation. In addition, it was also found that the l
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