预处理与离子注入gan外延材料的性能分析-performance analysis of gan epitaxial materials pretreated and ion implanted.docxVIP

预处理与离子注入 GaN 外延材料的性能研究摘要GaN 基体系材料具有禁带宽度宽、热稳定和化学稳定性好，波长范围大的 特点，在光电子和微电子领域有着极其广泛的应用前景。本文利用 MOCVD 生 长技术，在经过预处理的衬底上外延生长出高质量的 GaN 薄膜，并对 GaN 的特 性进行了系统研究。另外，利用离子注入技术制备出过渡族金属掺杂的 GaN 基 稀磁半导体，从注入引起的结构变化研究铁磁性的起源问题。结果如下：1. 研究了蓝宝石衬底预处理的腐蚀工艺，结果表明：采用浓磷酸溶液，在265℃下，腐蚀 45~50 分钟，得到了具有较理想图形的蓝宝石衬底。2. 利用 XRD 分析了衬底预处理对 GaN 薄膜晶体质量的影响。结果表明： 在经过预处理的蓝宝石衬底上外延生长的 GaN 薄膜显出更好的结晶质量。其?XRD(0002)面上的半峰宽为 293arcsec，(101 2)面半峰宽为 560arcsec；位错密度降低到 9.6×106cm?2；在 15μm×15μm 尺寸内，其均方根粗糙度(RMS)为 1.898nm； 其压应力也降低到 0.071GPa。3. 研究了快速热处理对 GaN 薄膜性能的影响。随着退火温度的升高，GaN 薄膜晶体质量逐渐提高。对 GaN 薄膜进行 950℃快速热处理后，其(0002)面半峰 宽为 301arcsec；其载流子浓度则高达 1×1018cm-3。4. 利用离子注入技术制备出过渡族金属（Fe、Ni）掺杂的 GaN 基稀磁半导 体材料，观察到部分样品具有明显的室温铁磁性。注入热处理后 GaN 的晶体质 量是由注入剂量和退火温度共同决定的。能量为 150KeV，剂量为 1×1016cm-2 的 Fe 离子注入，在 800℃热退火处理后，GaN 外延层的晶格质量较好且铁磁性最 强。并在研究注入对微结构的影响的过程中，对铁磁性的起源进行了探讨。关键词：GaN 外延层，蓝宝石衬底，快速热处理，离子注入，稀磁半导体STUDY ON THE PROPERTIES OF PRETREATED AND ION IMPLANTED GALLIUM NIRTIDEABSTRACTGallium nitride materials have become one of the forefront research topics in semiconductor materials due to their excellent properties. In this paper, GaN films were grown on sapphire substrate by Metal Organic Chemical Vapor Deposition (MOCVD). The properties of GaN were studied. In addition, Fe-, Ni-doped GaN thin films have been made by ion implantation technology and the origin of ferromagnetism was discussed. The main results are as followings:The etching technology of the sapphire substrate has been studied. The results showed that the sapphire substrates with ideal graphic were obtained in the H3PO4 etch solution at 265?C for 45~50min.The properties of the GaN epilayer were analyzed by X-ray diffraction (XRD), Atomic force microscope (AFM) and Raman spectra in order to study the influence of the spphire substrate pretreated on the crystal quality of GaN film. These results showed that the GaN epilayer grown on the pretreated sapphire substrate exhibited excellent crystal quality, the XRD FWHMs of the GaN epilayer in (0002) plane and?(101 2) plane were 293arcsec and