晶硅太阳能电池表面sb2oxal2o3复合薄膜的制备及其增效性能研究-preparation of sb 2 oxal 2 o 3 composite film on the surface of crystalline silicon solar cell and its synergistic effect.docxVIP

命，并且 Al2O3 薄膜具有出色的减反射效果，可以在一定程度上替代 SiNx 减反射涂层，简化实验条件，节约成本。 关键词：晶硅太阳能电池，氧化锑，氧化铝，少子寿命，太阳能电池增效IIIAbstractCrystalline silicon (c-Si) based solar cell has achieved the highest power conversion efficiency (PCE) in all different kinds of solar cells nowadays and its technique in production is mature either. In recent years, the researches in PCE improvement in c-Si are mostly focusing on using semiconductor nanoparticles. In this paper, Sb2Ox/Al2O3 metal oxide layer were synthesized on the surface of c-Si solar cells through the chemical bath method (CBD) and sol-gel method. The structure, morphology and optical properties of the Sb2Ox/Al2O3 layer were characterized using field emission scanning electron microscope (FESEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV-Vis-NIR reflection absorption spectroscopy. The minority carrier lifetimes and sheet resistance of c-Si solar cell with Sb2Ox/Al2O3 layer were also measured by the measurement system for solar cell manufacturing and four-point probe. The photoelectrical properties of the c-Si solar cell with Sb2Ox/Al2O3 layer were tested using sun light source simulator, quantum efficiency test station and electrochemical workstation.First, Sb2Ox layer was synthesized on the surface of c-Si solar cells through the chemical bath method, the Sb2Ox layer and silicon substrate can form a heterojunction after annealing at appropriate temperature. We study the effects of the different concentration of Sb(Ac)3 and the addition of surfactant on the morphology and the performance of the Sb2Ox layer. We tested the photoelectrical properties of c-Si solar cell with Sb2Ox layer, the quantum efficiency and power conversion efficiency were both improved comparing with c-Si solar cell without treatment. We use XPS analysis and electrochemical impedance spectroscopy (EIS) to prove that there existing a qusi- PN junction between Sb2Ox layer and silicon substrate where the Sb(V) ions act as an electron donors, while t