TVS器件钝化技术与可靠性研究-半导体芯片系统设计与工艺专业论文.docxVIP

I I 摘 要 氮化硅薄膜具有优良的机械性能以及强的阻挡杂质粒子扩散和水汽渗透等优点， 在微电子学领域中有着越来越广泛的应用。 本文主要研究了瞬变电压抑制器（TVS）中氮化硅钝化层的制备和该钝化层的特 性。对器件表面特性以及钝化保护的分析表明，表面效应是引起漏电流的主要因素， 采用合适的钝化保护方法可以显著降低漏电流。实验发现氮化硅直接钝化在器件表面 会产生很大的界面应力，对器件可靠性产生影响，于是本文提出了多晶硅+氮化硅的 复合钝化结构，在这种结构下，对 TVS 器件进行钝化，对比其电性参数，发现该结 构钝化效果很好。同时对二氧化硅钝化、氮化硅直接钝化、多晶硅+氮化硅钝化进行 了可靠性分析，发现多晶硅+氮化硅钝化的 TVS 器件的可靠性最好，失效几率仅为 0.8%，远小于二氧化硅钝化的 9.2 %和氮化硅直接钝化的 4.4%。 在以上的基础上，利用发光显微镜和扫描电子显微镜对失效的瞬变电压抑制器进 行了失效解剖分析，发现失效晶粒大多为热点击穿损坏，并且常发生在钝化层的切割 损伤层，于是对划片切割方式进行试验，发现刀片择向和方式影响了成品的可靠性， 对不同择向和方式划片进行对比后发现沿着解理面划片效果好，为了进一步改善划片 质量，提出了背切+裂片这一新的划片方式。实验证明择向背切能极大改善高温漏电 流在划片后急升的情况，使芯片在划片后的可靠性变好。 关键词：瞬变电压抑制器; 可靠性; 失效分析; 切割损伤层; 氮化硅薄膜 II II Abstract Silicon nitride thin film is important electric dielectrics with excellent mechanical and passivation properties. It will be widely used in microelectronics. Passivation characteristic and manufacturing process of TVS (Transient voltage suppressor)’s Si3N4 passivation layers are studied. Analysis of surface characteristic and passivation protection shows that surface effect is the main reason for leakage current. Leakage current can be obviously reduced by appropriate passivation. The results showed large interface stress existed in the surface between Si and Si3N4 when passivation layer just made up of single Si3N4 film. The interface stress would influence reliability of device. In that case, Poly-Si and Si3N4 dual passivation layer was proposed. And it was applied in TVS passivation. The electrical parameters showed very good after test. Then reliabilities were compared among SiO2, single Si3N4 and Poly-Si/Si3N4 passivation layers by HTRB (High Temperature Reverse Bias) test. The results showed Poly-Si/Si3N4 passivation layer has the best performance (0.8% failed) than SiO2 (9.2% failed) and single Si3N4 (4.4% failed). Based on the above study, failure analysis is performed using PEM (Photon Emission Microscopy) and SEM (Scanning Electron Microscope). Results showed most of failure chips damaged by thermal runaway in the dicing zone. It