T型自由层自旋力矩转移磁隧道结结构的设计与模拟计算-微电子学与固体电子学专业论文.docxVIP

II II Abstract With the rapid rise of information technology and information industry, especially the extension and popularization of multimedia computer network in the world, people’s need for data storage, processing and transmission showed a geometrically sharp increase, and thus led to the rapid development of information storage technology. Due to its non-volatile characteristic, high write endurance, low power consumption, high storage density and high read/write speeds, magnetic random access memory causes a wide range of interest in the field of storage system, and becomes one of the most possible candidates in the next generation’s storage system. MRAM application is still in the development and has much improvement room. This thesis presented a novel STT-MRAM cell with T-shape free layer structure, and models were built using micro-magnetic simulation software. The relationship between the switching probability percentage of STT-MRAM cell with T-shape free layer and its switching threshold current density has been studied. The performance difference of the T-shape free layer structure and the conventional three-layer structure was compared from the aspects of the TMR and the reversal current density, and the reason of the performance difference is analyzed by modeling the magnetization reversal of the free layer. The heat accumulating effect of the T-shape free layer structure was illustrated by ANSYS finite element thermal simulation; the impact of the heat accumulating effect on improving the magnetization reversal efficiency was illustrated from the aspect of perpendicular anisotropy weakening. Then, the T-shape free layer structure was optimized: Firstly, the relationship between the reversal current density of the T-shape cell and the cross-section area of the upper free layer was studied; then the way to improve the performance of the T-shape cell mostly without exceeding the temperature tolerance limitation was presented. Finally, the heat-assisted