氮化硅薄膜的制备工艺优化和光学性质的研究-物理电子学专业论文.docx

华侨大学硕士学位论文：氮化硅薄膜的制备工艺优化和光学性质的研究 华侨大学硕士学位论文：氮化硅薄膜的制备工艺优化和光学性质的研究 II II 这还需要进行进一步研究。 [关键词]：PECVD 氮化硅薄膜 太阳电池 PAGE PAGE IV Abstract It is important work for scientific researchers to improve utility ratio of solar energy, especially to improve conversion efficiency of solar cells, there are many ways which can be used to improve it, depositing reflection films on solar cells is the most doable one, and can debase the cost of solar cells. The research progress, future and unsolved problems of silicon nitride thin film for solar cells were systematically reviewed in this paper. By the PECVD (Plasma Enhanced Chemical Vapor Deposition) system and thereactants of silane and ammonia, silicon nitride thin film with excellent antireflective and passivation effects was prepared. The relatively optimum parameters for depositing SiNx thin film and the basic physical and chemical properties of SiNx were investigated. The effects of substrate the temperature, the flow of silane, the RF power and the chamber of pressure on the refractivity and deposition rate were researched. And the impact of experimental parameters on the minority carrier lifetime of film, time on the film properties were also be researched. These experimental results offered helpful reference and guide for developing the domestic solar cell process. The silicon nitride thin film deposited in this paper has excellentantireflective results and transmissivity. Its refractive index is about 2.0.The surface of thin film is very smooth, with a roughness of about 3 nm. The film is amorphous and hard to be crystallized, and it is silicon-rich. The experiments indicate that the deposition rate will increase with the increase of the flow ratio of SiH4/NH3, slightly decrease with the increase of substrate temperate, and increase obviously with the increase of RF power, slightly increase with the increase of chamber pressure. However, the refractive index and permeation rate will increase with the increase of the flow rati