玻璃基太阳能电池薄膜材料的制备及其结构和性能研究材料学专业论文.docxVIP

AbstractThis Abstract This paper aimed systematically at studying the sol·gel techniques and properties of transparent conducting oxide films and a-Si／poly—Si thin films for solar cell the basis of the analysis of the progresses of building integrated photovoltaic∞IPv)materials．The effect of Sol·Gel techniques，magnetron sputtering conditions，annealing temperature and doped concentration of fluorin and antimony TCO microstructure and electrical properties were systematical studied．Polycrystalline silicon films were fabricated by aluminum—induced crystallization．These films are prepared by plasma-enhanced chemical vapor deposition technology from hydrogen—diluted SiH4．The effect of PECVD techniques and metal-induced crystallization poly·Si thin films microstructure and optical properties Were systematical studied．In this dissertation,some new and interesting results following． (1)Fluorin-doped tin oxide thin films were fabricated Si02 coated soda-lime glass by Sol—Gel dip coating method using SnCl2·2H20 and NH4F Precursors．Fluorin·doped tin oxide thin films were of uniformity with grain size 10nm．The sheet resistance was about reach 20-一30D．,U，the visible transmission reached about 85％ (2)Antimony—doped tin oxide thin films were fabricated Si02 coated soda-lime glass by the sol-gel dip coating method using metal salts SnCl22H20 and SbCl3 Precursors．The effectofheat-treatmenttemperature，antimony-dopedlevel and coatingthickness onthe structure and composition of Sn02 films．The optimum heat-treatment temperature is 773K，the tin oxide with antimony—doped suitable level is 5at％．The sheet resistance reach 78D．／I]，carrier concentration is 1．1x1021 cm。with mobility 1．46cm2V‘1。S 1，and the visible transmiSSjon is about 75％． (3)Tin-dopedIndiumOxide(ITO)thinfilms havebeendeposited onto glass substrates by DC magnetron sputtering using ITO sintered target with 90 wt％In and 10 wt％Sn．The effect of oxygen partial pressures and substrate temperature microstructure and electrica