基于微纳米阵列材料的低温互连技术研究-材料学专业论文.docxVIP

状晶在 500nm-800nm 时有利于焊料的嵌入，可以得到较好的结合效 果。对表面微纳米阵列镀金防氧化处理，可以改善焊接效果。 2. 热压焊接后焊点实现了嵌入式结合，其焊接强度随着热压温度和压 力的提高而显著提高，当热压温度高于 180℃，压力高于 550gf/p 时提高幅度趋于平缓。 3. SnAgCu 系焊料表面硬度低于 SnZn 系焊料，采用本低温互连技术， SnAgCu 系焊料的焊接效果要优于 SnZn 系焊料。 4. 焊点经过热处理后，焊接效果有显著提高，实现了化学结合，锡镍 结合界面扩散行为以非反应扩散为主,反应扩散为辅，且没有传统回 流焊产生的脆性金属间化合物层，由金属间化合物形成热模型预测 可能生成的扩散化合物为 Ni3Sn4。 5. 微纳米阵列材料表面的微纳米结构具有较高的活性，且为扩散行为 提供了大量的界面，促进了其与焊料的扩散。 以上研究为基于微纳米阵列材料的低温互连技术奠定了基础，为 3D 高密度封装提供了在一种新型绿色低温互连方法。 关键词：电子封装，低温互连，微纳米阵列，热压焊接，热处理 RESEARCH ON LOW TEMPERATURE BONGDING TECHNOLOGY BASED ON MICRO-CONES ARRAYS ABSTRACT With the development of a variety of high-density micro-electronics packaging technology, the electronic interconnection faces great challenge. Currently, there are a variety of ways to compactly connect multiple chips using peripheral wiring technologies, but the package density of IC is limited by the wire-bonding technology, these methods will gradually turn to the Face to Face type interconnection. And the requirement of the temperature of the interconnection will become more and more strongly with the increasing of the number of chips and the pin wiring. High temperature will seriously affect the reliability of the packaging. So we developed a new low temperature bonding technology based on the micro-cones arrays. The micro-cones arrays had special surface of the needle crystal structure in the Z order. It could get extremely high bonding strength because of the physical biting cooperation when the arrays combined with other materials. This method included three key parts: first, the preparation of the Ni micro-cones arrays on the surface of bump and the soft solder on another surface; second, the relevance and timeliness hot bonding; the third, heat treatment technology. Our laboratory developed the method of preparation of Ni micro-cones arrays by directional electrodepositing which is simple and low-cost. It provided the necessary condition for this low temperature bonding technology. And then, we made soft solder