MOS电路版图设计规则解析.pptVIP

设计规则解析 以TSMC 0.25?m 硅栅N阱CMOS工艺的部分设计规则为例 一、几点说明 1. MASK NAMES (Layer) PW --- Definition of P-Well. NW --- Definition of N-Well. OD --- Definition of thin oxide for device and interconnection. PO --- Definition of Poly-Si. PP --- Definition of P+ implantation. NP --- Definition of N+ implantation. CO --- Definition of contact window from M1 to OD or PO. M1 --- Definition of 1st metal for interconnection. VIA1 -- Definition of via1 hole between M2 and M1. M2 --- Definition of 2nd metal for interconnection. CB --- Definition of bonding pad. 3. Terminology Definitions for Rule WIDTH SPACE : CLEARANCE : EXTENSION : OVERLAP : 2. Terminology Definitions for Region N+ OD : OD covered with NP. P+ OD : OD covered with PP. Cold N-Well : N-Well connected to the most positive voltage (Vdd). Hot N-Well : N-Well not connected to the most positive voltage Hot N+ diffusion : all N+ diffusion regions outside the N-Well which have a potential not equal to the substrate voltage. Hot P+ diffusion : all P+ diffusion regions inside the N-Well which have a potential not equal to the N-Well potential. Cold diffusions : Outside N-Well : a diffusion which has the potential the same as the substrate. Inside N-Well : a diffusion which has the potential the same as the N-Well. 二、N-Well Rule NW.W.1 Minimum dimension of a NW region A 1.2 ?m NW.S.1 Minimum space between tow NW regions B 2.0 ?m with different potential (include NW resistor) NW.W.2 Minimum dimension of a hot NW region A1 3.0 ?m ( NW resistance) NW.S.2 Minimum space between tow NW regions C 0.6 ?m with the same potential Merge if space is less than 0.6 ?m NW NW PW A A A1 B C 三、Thin Oxide Rule (active area) OD.W.1 Minimum width of an OD region to define A 0.3 ?m the width of NMOS/PMOS OD.W.2 Minimum width of an OD region for B 0.3 ?m interconnect (