Buckling of Single-Crystal Silicon Nanolines under Indentation英文文献资料.docVIP

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Buckling of Single-Crystal Silicon Nanolines under Indentation英文文献资料.doc

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Buckling of Single-Crystal Silicon Nanolines under Indentation英文文献资料

HindawiPublishingCorporation JournalofNanomaterials Volume2008,ArticleID132728,11pages doi:10.1155/2008/132728 ResearchArticle BucklingofSingle-CrystalSiliconNanolinesunderIndentation MinK.Kang,1BinLi,2PaulS.Ho,2andRuiHuang1 1 2 DepartmentofAerospaceEngineeringandEngineeringMechanics,UniversityofTexas,Austin,TX78712,USA MicroelectronicsResearchCenter,UniversityofTexas,Austin,TX78758,USA CorrespondenceshouldbeaddressedtoRuiHuang,ruihuang@ Received1October2007;Accepted27December2007 RecommendedbyJunlanWang Atomicforcemicroscope-(AFM-)basedindentationtestswereperformedtoexaminemechanicalpropertiesofparallelsingle- crystalsiliconnanolines(SiNLs)ofsub-100-nmlinewidth,fabricatedbyaprocesscombiningelectron-beamlithographyand anisotropicwetetching.TheSiNLshavestraightandnearlyatomically?atsidewalls,andthecross-sectionisalmostperfectly rectangularwithuniformwidthandheightalongthelongitudinaldirection.Themeasuredload-displacementcurvesfromthe indentation tests show an instability with large displacement bursts at a critical load ranging from 480μN to 700μN. This phenomenonisattributedtoatransitionofthebucklingmodeoftheSiNLsunderindentation.Usingasetof?niteelement modelswithpostbucklinganalyses,weanalyzetheindentation-inducedbucklingmodesandinvestigatethee?ectsoftiplocation, contactfriction,andsubstratedeformationonthecriticalloadofmodetransition.Theresultsdemonstrateauniqueapproachfor thestudyofnanomaterialsandpatternednanostructuresviaacombinationofexperimentsandmodeling. Copyright?2008MinK.Kangetal.ThisisanopenaccessarticledistributedundertheCreativeCommonsAttributionLicense, whichpermitsunrestricteduse,distribution,andreproductioninanymedium,providedtheoriginalworkisproperlycited. 1. INTRODUCTION Inthispaper,wecarryoutnanoindentationexperiments to characterize the mechanical properties of single-crystal Si nanolines (SiNLs). These SiNLs are fabricated by a process combining electron beam lithography (EBL) and anisotropicwetetching[25,26].Theyhaveatomically?at sidewalls a