基于肖特基栅共振隧穿三极管的器件模拟与实验分析.pdfVIP

第29卷 第6期 半 导 体 学 报 Vo1．29 No．6 2008年6月 JOURNAL OF SEMICONDUCTORS June，2008 Simulation and Experimental Research on a Schottky Gate Resonant Tunneling Transistor Song Ruiliang ，Ma0 Luh0ng，Gu0 Weilian，and Yu Changliang (School ol Electronic Information Engineering，Tianjin University·Tianjin 300072，China) Abstract：A Schottky gate resonant tunneling transistor(SGRTT)is fabricated．Relying on simulation by ATLAS soft_ ware，we find that the gate voltages can be used to control the current of SGRTT when the emitter terminal is grounded and a positive bias voltage is applied to the collector termina1．When the collector terminal is grounded，the gate voltages can control the peak voltage．As revealed by measurement results，the reason is that the gate voltages and the electric field distribution on emitter and collector terminal change the distribution of the depletion region． Key words：Schottky gate resonant tunneling transistor device simulatiom depletion region EEACC：2560S CLC number：TN313．2 Document code：A Article ID：0253-4177(2008)06-1062-04 5nm—thick In0 l7 Ga0 83 As sub—wells are designed beside l Introduction two barrier layers to improve the PVCR (peak to val— ley current ratio)parameter．The low—doped n —GaAs In recent years，resonant tunneling transistors emitter layer is introduced to enhance controllable ca— (RTTs)have attracted at