二维镓族半导体的制备及其性能分析-preparation and performance analysis of 2d gallium family semiconductors.docxVIP

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二维镓族半导体的制备及其性能分析-preparation and performance analysis of 2d gallium family semiconductors.docx

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二维镓族半导体的制备及其性能分析-preparation and performance analysis of 2d gallium family semiconductors

AbstractTwo-dimensionalsemiconductornanostructures,withdecresceddimensionandsizeshowsomeparticularandpropertiesoflight,electronic,magneticandthermologybeingdifferentfromthecorrespondingbulkmaterials,whichrenderawiderangeapplicationsinnanoscaleelectronicsandoptics.Themostwidelystudiedtwo-dimensionalmaterialisgraphene,duetoitsrichphysicsanditshighmobility.However,pristinegraphenedoesnothaveabandgap,apropertythatisessentialformanyapplications,includingtransistors.Ontheconditionthatlimitationwefollowedthewayofgrapheneandpreparedanaloguesofgraphemeincludingfew-layerGaSe,GaS,Ga2O3andGaNasnew-typeoftwo-dimensionalnanomaterials.Thispaperdiscussedandanalysedindetailabouttheirpreparation,propertiesandapplications.Onthebasisofmaterials’demonstrated,thispaperisdividedintofoursections:two-dimensionalsemiconductorGaSe,GaS,Ga2O3andGaN,wediscusstheirpropertiessystematicallyandgetoutstandingresultsasfollows:1.SynthesizesinglecrystalGaSeandGaSbulkbyhigh-temperaturereactioninthequartztubeandthengetthe2-Dsemiconductormechanicalcleavage.Using2-DGaSeastheprecursorweproduced2-DGa2O3andGaNbythewayofheatoxidationintheairandammoniationintheNH3.These2-Dmaterialsjustarefewatomiclayer.2.2-DmaterialsGaSeandGaShaveobviouselectricalandphotoelectricityproperties.TheelectricalcharacteristicsmeasuredinGaSetransistorarepredominant,theon/offrationisupto104-106,whichismuchhigherthangraphenetransistor.Thefieldeffectmobilityof0.01-10cm2/V.s.Theconductivityof2DGaSeshowsasignificantchangeduringthetemperaturerangeof50~60K,raisingabovethe60K,anddecreasingbelowthe50K.3.2-DmaterialsGaSeandGaSphotodetectorshavehighsensitivityandresponsivityfortheultravioletlight,thephotoelectricresponsetimeofbelow30msandphotoresponsibilityof2.2~10A/W,theexternalquantumefficiency(EQE)upto1369.2~4890%.Forthe2-DmaterialsGa2O3andGaN,thispapermainlyinvestigatesthesyntheticmethodanddeterminestheoptimumtechnologicalconditions.Keyword:2-DGaSe,2-DGaS,2-DGa2O3,2-DGaN,photodetector目录摘要.......................................................