The modification of electrical properties of Aun-Hg3In2Te6 Schottky contact by the introduction of ITO interlayer.pdfVIP

Current Applied Physics 16 (2016) 623e627 Contents lists available at ScienceDirect Current Applied Physics journal homepage: /locate/cap The modi?cation of electrical properties of Au/n-Hg3In2Te6 Schottky contact by the introduction of ITO interlayer Yapeng Li, Li Fu*, Jie Sun State Key Laboratory of Solidi?cation Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xian 710072, China article info Article history: Received 17 December 2015 Received in revised form 1 March 2016 Accepted 10 March 2016 Available online 11 March 2016 Keywords: Au/n-Hg3In2Te6 Schottky contact ITO interlayer XPS depth analysis Pulsed laser deposition abstract The Indium tin oxide (ITO) interlayer was deposited on the surface of n-Hg3In2Te6 (short for MIT) wafer by means of Pulsed Laser Deposition (PLD) method for improving the Au/n-MIT Schottky contact properties. Through the XPS depth pro?le analysis, it was found that the In3t on the surface of MIT changed to In0 due to the reduction of O0 during the ITO deposition process. When the ITO interlayer was prepared between Au and MIT, the leakage current and series resistance of Au/n-MIT contact decreased and the Schottky barrier height increased. This phenomenon can be explained that the ITO passivation layer reduced the surface states of MIT wafer and weakened the Fermi level pining, which was caused by that In3t on the surface of MIT changed into In0 due to the reduction of O0 and O2à obtained the electrons from In3t occupied the Hg2t vacancies. ? 2016 Elsevier B.V. All rights reserved. 1. Introduction n-MIT crystal is applied in the fabrication of near-infrared photoelectric detector, which are due to its excellent properties such as direct band gap transition (Eg ? 0.74 eV), high quantum ef?ciency, wide temperature range and short response time [1e4]. In order to obtain photoelectric detector with excellent properties, it is essential to form a stable Schottky contact with proper barrier heigh