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单晶硅太阳电池腐蚀液及绒面结构的研究-光学工程专业论文.docx

单晶硅太阳电池腐蚀液及绒面结构的研究-光学工程专业论文.docx

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单晶硅太阳电池腐蚀液及绒面结构的研究-光学工程专业论文

摘要 摘要 第 第 II 页 不同的工艺制备三种形貌的背表面,其中,单面制绒平背表面电池的所有性能参 数较其他两种背表面电池均有所提高;减薄平背表面电池的 FF,Pm 和 η 稍高于 正常绒面背表面电池,但由于厚度减小导致了 Isc 和 Voc 不高。理论分析了得出 Rs 对 FF 的影响大于 Rsh。单面制绒结构电池的铝背场均匀性较好,其厚度约为 13μm,与理论值相近。在 440nm~1000nm 波长范围内测得电池的外量子效率 (EQE),发现组 2 电池的 EQE 最高;组 3 电池对于长波部分的 EQE 比组 1 电 池要好一些。 关键词:四甲基氢氧化铵,绒面,铝背场,太阳电池 ABSTRACT ABSTRACT 第 第 III 页 TEXTURISATION ETCHANT AND STRUCTURE OF MONOCRYSTALLINE SILICON SOLAR CELLS ABSTRACT It is an important way to solve the energy problems and environmental issues by using photovoltaic power. Low-cost and high-efficiency are always the two crucial research goals of solar cells. Many measures have been taken to reduce the reflectance of incident light on the surface of solar cells to improve the conversion efficiency. This thesis improved surface morphology of monocrystalline silicon solar cells from both the chemical and physical aspects, using organic alkali etching solution (4-methyl ammonium hydroxide, TMAH) and one-sided texturisation method. The research on TMAH solution includes studying the effect of TMAH and isopropyl alcohol (IPA) concentration, reaction temperature and reaction time on the system. With the increase of TMAH concentration form 0% to 2%, the reflectivity decrease. 2% TMAH (with 10% IPA) can make surface reflectivity decreased to 13.38%. With the solution containing 2% TMAH, 8% IPA can minimize the surface reflectivity to 13.43% by changing IPA concentration form 0% to 18%. Silicon surface reflectance declines with the solution temperature. At 80 ° C and 90 ° C, the reflectivity is 13.47% and 13.40%. 80 ° C is appropriate given the experimental and control costs. A minimum reflectivity of 13.39% can be obtained after 30min reaction. The optimum conditions of TMAH solution is: 2% TMAH, 8% IPA at 80 ° C for 30min. Comparing with traditional NaOH texturisation, TMAH texturisation has advantages both on antireflection and on ionic contamination. TMAH pyramids have good uniformity and high coverage. The characteristic parame

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