廉价衬底上PECVD法制备非晶硅薄膜的工艺研究-材料物理与化学专业论文.docxVIP

廉价衬底上 廉价衬底上 PECVD 法制备非晶硅薄膜的工艺研究 STUDY ON THE FABRICATION TECHNOLOGY OF AMORPHOUS SILICON FILMSBY PECVD ON LOW- COST SUBSTRATES ABSTRACT Environment pollution and energy source shortage are becoming the most important problems for the current society. Solar energy is a regenerative and clean energy.The researeh of solar cells becomes more and more important.The amorphous silicon films solar cells have been concerned in the field of PV at present.The application of low-cost substrates makes it more competitive in cost- control.Amorphous silicon thin films have been widely studied in the recent years. Using SiH4 and H2 as gas sources,amorphous silicon thin films are deposited on glass、silicon wafer、stainless steel substrates by plasma enhanced chemical vapor deposition(PECVD). Using the method such as XRD、Raman、SEM、FTIR to study different deposition parameters such as silane concentration、substrate temperature、 RF power、gas pressures influence to the thin films deposition rate、structure、bonding mode and surface topography. It indicated that with the increase of silane concentration、substrate temperature、 RF power and gas pressure,the deposition rate of amorphous silicon thin films on glass increased.When silane concentration increased from 1% to 9%, the deposition rate increased the most rapidly,the configurations shifted from SiH 、 SiH2 to SiH;when substrate temperature increased from 300℃ to 350℃, the deposition rate increased the most rapidly,the configurations shifted from SiH 、 SiH2 to SiH;when RF power increased from 40W to 70W, the deposition rate increased the most rapidly,the configurations shifted from SiH to SiH、SiH2;when gas pressure increased from 80Pa to 100Pa, the deposition rate increased the most rapidly,the configurations shifted from SiH、SiH2 to SiH.Then the optimized depositon parameters of amorphous silicon thin films were obtained.Different substrate materials had a great influence to the surface topography of thin films.The thin films deposited