磁刺激仪的优化设计及其充放电回路的控制与驱动的研究-optimization design of magnetic stimulator and research on control and drive of its charge and discharge circuit.docxVIP

华 华 中 科 技 大 学 硕 士 学 位 论 文II摘 要磁刺激技术是利用变化的磁场无接触地通过空间耦合人组织内部形成的感应电 流刺激组织细胞，从而引发细胞的动作电位，它是一种非侵入、无创伤性的刺激方 式。鉴于其有效、无痛、无损伤、易于重复及操作简便等明显的优点，它已成为一 项安全、有效的现代医疗技术，广泛应用于医学临床和基础研究中。首先在回顾磁刺激技术及相关技术一些发展和应用的基础上，介绍了磁刺激之 所以得到发展和应用的医学原理及本身的优点（相对电刺激），同时简要地介绍了系 统的实现原理：通过电容器组储存电能，储能电容组再对刺激线圈放电产生脉冲电 流，从而产生能刺激生物体的脉冲磁场。这部分的内容为介绍磁刺激的设计和优化 做了一些理论准备。然后对系统进行了优化设计，包括充放电回路、控制回路的一些改进设计。在 充放电回路中我们采用两组大电容（接有分压电阻以分压保护）并联的方法，并通 过改变晶闸管和 IGBT 的导通与关断来实现双相电流脉冲，同时在放电回路中增加反 向吸收电路，很好地实现了精确控制充、放电的时间以提高系统的效率和稳定性。 控制回路中我们引入单片机系统实现对磁刺激仪的控制，包括刺激时间、刺激频率 以及刺激强度的调节和设置。文章还介绍了充放电回路中 IGBT/晶闸管的使用和相应 驱动电路的设计。最后文章总结了系统的设计,并对以后进一步的改进优化做了构思,对未来磁刺 激技术的发展和应用做了展望。关键词：磁刺激 全桥移相软开关 线圈 脉冲磁场 开关元件的驱动 电容组并联IIIIABSTRACTMagnetic stimulation (MS) is a kind of stimulating technique for some excitable tissues in which a coil with a flow of time-varying current is extra corporeally place above the stimulating sit and generates a high-pulsed magnetic field while electricfield is induced within the tissue. MS is non-contact, non-invasive ,no pain and easy to use control. It is these advantages that make it much popularity in clinic and other basic research.Based on the development and application of modern magnetic stimulation technology, the paper firstly introduces the medical principle of magnetic stimulation and its precedence to electric stimulation. The paper also introduces the principle of whole system: energy is stored in series of capacitance; by the way of discharge, there will be impulse current in stimulation coils, therefore, the system gets an impulse magnetic field which could be used for organism stimulation.And then, we made some optimization to the whole system, which includes improvement in the circuits of charge and discharge, as well as in the control circuit. In the circuits of charge and discharge, we adopt parallel connection of two groups of capacitance with large volume (connected with resistance to prevent from being damaged), and the double direction impulse current comes true by control the switch of transistor