TFT栅绝缘层用氮化硅薄膜的分析-光学专业论文.docxVIP

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TFT栅绝缘层用氮化硅薄膜的分析-光学专业论文.docx

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TFT栅绝缘层用氮化硅薄膜的分析-光学专业论文

电子科技大学硕士学位论文电子科技大学硕士学位论文 IV IV 录摘要 ················································································································ I ABSTRACT ······································································································ II 目录 ·················································································································· IV 第一章引言 ···································································································· 1 1.1 课题研究背景····················································································1 1.2 课题研究意义及研究目的 ································································2 1.3 氮化硅薄膜的性质及主要应用 ························································3 1.3.1 物理性质及应用 ·····································································3 1.3.2 化学性质及应用 ·····································································5 1.4 氮化硅薄膜的主要制备方法 ····························································6 HYPERLINK \l _TOC_250011 1.4.1 等离子体增强化学气相沉积(PECVD)法 6 HYPERLINK \l _TOC_250010 1.4.2 溅射( Sputtering )法 10 HYPERLINK \l _TOC_250009 1.4.3 常压化学气相沉积(APCVD)法 10 HYPERLINK \l _TOC_250008 1.4.4 低压化学气相沉积(LPCVD)法 11 HYPERLINK \l _TOC_250007 1.4.5 光化学气相沉积( Photo ? CVD )法 11 1.5 本论文的主要工作内容及意义 ························································12 HYPERLINK \l _TOC_250006 第二章氮化硅薄膜对 TFT 工作特性影响分析 14 HYPERLINK \l _TOC_250005 2.1 TFT 的结构、工作原理 14 HYPERLINK \l _TOC_250004 2.1.1 TFT 的结构 14 2.1.2 正平面结构 TFT 制造工序 14 HYPERLINK \l _TOC_250003 2.1.3 TFT 的工作原理 15 HYPERLINK \l _TOC_250002 2.2 TFT 栅绝缘层(栅介质材料)应满足的性能要求 17 2.3 氮化硅薄膜作为栅绝缘层用的优点 ················································18 HYPERLINK \l _TOC_250001 2.4 氮化硅薄膜对 TFT 工作特性的影响分析 19 第三章氮化硅薄膜的制备与性能测试 ························································· 21 3.1 实验材料 ···························································································21 3.2 氮化硅薄膜的制备 ································