TSV功耗模型及功耗分析-集成电路工程专业论文.docxVIP

万方数据 万方数据 摘要 摘要 集成电路中的芯片数量按照摩尔定律预测的速度飞速发展，在集成电路的设 计中需要寻求新的互连技术，三维集成电路 TSV（硅通孔）技术引起了广泛关注。 三维集成电路提出了一种全新的提高 IC 集成度的方法，而 TSV（硅通孔）技术作 为一种全新的互连技术，在三维集成电路中有着非常重要的作用。互连线功耗作 为互连设计中不能忽略的一项，非常关键。TSV 工艺对其功耗的影响，成为 TSV 研究必不可少的一项。 本文目的是为了研究单个 TSV 和两个 TSV 工艺对其功耗的影响。在研究单个 TSV 功耗之前，本文首先对其功耗模型进行了建立，确定其等效电路，对等效电 路中的元件进行计算，研究工艺对其等效电路中元件的影响，进而通过功耗计算 公式，就可得出工艺对其功耗的影响。 对于两个 TSV，首先研究了其三个等效模型，即П 模型、T 模型和传输线模 型，本论文主要根据传输线模型来分析工艺对功耗的影响。用软件 HFSS 作为辅助， 可以求得传输线模型中元件的参数值，最后对其功耗进行了分析。最终可以获得 TSV 工艺的改变对其功耗的影响。 关键词：TSV（硅通孔） 互连 功耗模型 Abstract Abstract With the rapid development of the integrated circuit in accordance with Moore’s Law, we need to find a new technology of interconnect in designing the circuit. 3D IC TSV(Through Silicon Via) has got more and more attention.3D IC provides a new method for improving integration of IC, the TSV(Through Silicon Via) technology plays a very important role in the 3D integrated circuit as a new interconnect technology. The power of interconnect is very important to the interconnect design and cannot be ignored. The effect of TSV’s technology to its power consumption becomes an indispensable in the research of TSV. The purpose of this paper is to study the effect of single and double TSVs’ technology to its power consumption. Before the studying of single TSV’s power consumption, the power model is established, the equivalent circuit is determined and the component values of the equivalent circuit are calculated. Then studying the effect of technology to the equivalent circuit elements, we can calculate the power consumption by the formula and get the effect of technology to its power. For two TSVs, there are three models, such as the П model, the T model and the transmission model. We study the transmission model in this paper. We can obtain the parameter values by using the software of HFSS. Then we can get the value of the TSVs’ power consumption and the effect of technology to its power. Keywords: TSV(Through Silicon Via) Interconnect Power model 目录 1 目录 第一章 绪